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BUP 313D
IGBT With Antiparallel Diode
Preliminary data
* Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Including fast free-wheel diode Pin 1 G Type BUP 313D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4228-A2 Pin 3 E
VCE
IC
Package TO-218 AB
1200V 32A
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 32 20
TC = 25 C TC = 90 C
Pulsed collector current, tp = 1 ms
ICpuls
64 40
TC = 25 C TC = 90 C
Diode forward current
IF
18
TC = 90 C
Pulsed diode current, tp = 1 ms
IFpuls
108
TC = 25 C
Power dissipation
Ptot
200
W -55 ... + 150 -55 ... + 150 C
TC = 25 C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Dec-02-1996
BUP 313D
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC RthJCD
0.63 1.25
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 -
V
VGE = VCE, IC = 0.35 mA, Tj = 25 C
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 C VGE = 15 V, IC = 15 A, Tj = 125 C VGE = 15 V, IC = 30 A, Tj = 25 C VGE = 15 V, IC = 30 A, Tj = 125 C
Zero gate voltage collector current
ICES
0.4
mA nA 100
VCE = 1200 V, VGE = 0 V, Tj = 25 C
Gate-emitter leakage current
IGES
VGE = 25 V, VCE = 0 V
AC Characteristics Transconductance
gfs
12 1000 150 70 -
S pF 1350 225 100
VCE = 20 V, IC = 15 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Dec-02-1996
BUP 313D
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit
ns 70 100
VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82
Rise time -
tr
45 70
VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82
Turn-off delay time
td(off)
400 530
VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82
Fall time
tf
70 95
VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82
Free-Wheel Diode Diode forward voltage
VF
2.2 1.7 2.8 -
V
IF = 15 A, VGE = 0 V, Tj = 25 C IF = 15 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
ns
IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C
Reverse recovery charge 100 150 C
Qrr
IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C
1 3 1.8 5.4
Semiconductor Group
3
Dec-02-1996
BUP 313D
Power dissipation Ptot = (TC) parameter: Tj 150 C
220 W
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
32
A
Ptot
180 160 140 120
IC
24
20
16 100 80 60 40 4 20 0 0 20 40 60 80 100 120 C 160 0 0 20 40 60 80 100 120 C 160 12
8
TC
TC
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 2
t = 9.0s p 10 s
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
IGBT
A
K/W
IC
10 1
100 s
ZthJC
10 -1
D = 0.50 0.20 10 0
1 ms
10 -2
0.10 0.05
10 ms
single pulse
0.02 0.01
DC 10 -1 0 10 10
1
10
2
10
3
V
10 -3 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VCE
tp
Semiconductor Group
4
Dec-02-1996
BUP 313D
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
30 A 26 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
30 A 26 17V 15V 13V 11V 9V 7V
IC
24 22 20 18 16 14 12 10 8 6 4 2 0 0
IC
24 22 20 18 16 14 12 10 8 6 4 2 0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
30 A 26
IC
24 22 20 18 16 14 12 10 8 6 4 2 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Dec-02-1996
BUP 313D
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 82
10 3
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, IC = 15 A
10 3 tdoff
t
tdoff ns
t
ns
tdon 10 2 10 2 tr tdon tf tf tr
10 1 0
5
10
15
20
25
30
A IC
40
10 1 0
50
100
150
200
300
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 82
10 mWs E 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 A IC 40
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 600V, VGE = 15 V, IC = 15 A
10 mWs E 8 7 6 5 4 Eon
Eon
Eoff
3 2 1 0 0 50 100 150 200 Eoff
300
RG
Semiconductor Group
6
Dec-02-1996
BUP 313D
Typ. gate charge VGE = (QGate) parameter: IC puls = 15 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
nF
VGE
16 14 12 10 8
C
600 V
800 V
10 0
Ciss
Coss 10 -1 Crss
6 4 2 0 0 10 20 30 40 50 60 70 80 100 10 -2 0
5
10
15
20
25
30
Q Gate
V 40 VCE
Short circuit safe operating area
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH
10
ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V
2.5
I Csc/I C(90C)
ICpuls /IC
6
1.5
4
1.0
2
0.5
0 0 200 400 600 800 1000 1200 V 1600 VCE
0.0 0 200 400 600 800 1000 1200 V 1600 VCE
Semiconductor Group
7
Dec-02-1996
BUP 313D
Typ. forward characteristics
IF = f (VF)
parameter: Tj
30 A 26
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 1
Diode
K/W
IF
24 22 20 18 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 V 3.0
ZthJC
10 0
Tj=125C
Tj=25C
10 -1 D = 0.50 0.20 0.10 10 -2 0.05 0.02 0.01 single pulse 10 -3 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Semiconductor Group
8
Dec-02-1996

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